Course Objectives

• Introduce the fundamental principles of plasma-based processing and thin film preparation by (plasma-enhanced) ALD
• Explore how reactive and energetic species such as radicals, ions, and photons influence the ALD process and affect the properties of the resulting films, including film conformality on 3D surface topologies
• Offer a comprehensive overview of plasma-enhanced ALD reactor technologies, highlighting critical design features and process variables
• Examine several plasma-enhanced ALD processes for key material systems
• Provide insight into current and potential future uses for plasma-enhanced ALD
• Compare the advantages and disadvantages of plasma-enhanced ALD to traditional thermal ALD

Course Description

Atomic Layer Deposition (ALD) has emerged as a crucial technology in both research and production environments, offering significant advantages through its ability to create very thin films with exceptional thickness precision, conformality, and uniformity. In recent years, plasma-enhanced ALD (PEALD) processes have gained prominence, marking a significant leap in their adoption for high-volume production. These processes are now widely utilized, featuring a variety of process approaches and reactor configurations. However, the specific benefits and applications of plasma-assisted ALD, as well as the choice of plasma settings and operational conditions, are not always straightforward. There are also common misunderstandings about potential drawbacks, such as plasma-induced damage and impacts on film conformality. This course aims to clarify these points, beginning with ALD and plasma processing fundamentals and extending to the diverse applications that benefit from plasma-enhanced ALD.

Course Materials

Course Notes