Education & Outreach > Short Courses > Short Course Catalog > Materials Characterization > Focused Ion Beams (FIB) and Secondary Ion Mass Spectrometry (SIMS)

Focused Ion Beams (FIB) and Secondary Ion Mass Spectrometry (SIMS)

Focused Ion Beams (FIB) and Secondary Ion Mass Spectrometry (SIMS)

Course Objectives

  • Become familiar with the principles of these two major materials analysis analytical techniques
  • Learn the capabilities of current instrumentation and the principal applications

Course Description

The course begins with a discussion of the components of a FIB system including the liquid metal ion source. The interaction of ions with matter (sputtering process and sputtering yield) is presented and the ion beam assisted chemical vapor deposition (CVD) process and the gas source method used to improve etch rate are explained. Current FIB instrumentation is summarized, including FIB-SEM combination instruments.

The ability to sputter and deposit at less than 10 nm resolution makes possible a wide range of FIB applications. Applications discussed include: imaging (including grain size measurements), micro-machining, integrated circuit modification, and preparation for analysis by other techniques such as Scanning Electron Microscopy (SEM), Transmission Electron microscopy (TEM), Auger Electron Spectroscopy (AES) and Energy Dispersive X-Ray Fluorescence (EDS). Failure analysis aspects of this exceptional site specific technique will be presented.

SIMS Segment

SIMS is compared with other commonly used analytical techniques (AES, XPS, RBS, and TEM). The SIMS process (sputtering, sputtering yield, secondary ion yield, secondary ion energy distribution, and information depth) is discussed. Static sputtering versus dynamic sputtering is addressed.

The instruments commonly used and currently available are presented. The ion source, ion optics, mass analyzer, detector, and vacuum system are described with emphasis on the advantages and disadvantages of various approaches to mass separation (magnetic sector, quadrupole, and time-of-flight analyzers).

Analysis considerations are shown. These include the choice of primary ion species, energy, angle of incidence, secondary ion species monitored, mass resolution, and gating required to achieve the desired sensitivity, depth resolution, and lateral resolution.

Examples of the various types of SIMS data (mass spectra, ion images, depth profiles, and line scans) are given along with methods of quantification. SIMS is especially known for sensitivity and depth resolution. Applications will be discussed for semiconductor, biological, polymer, mineral, and metal applications.

Course Cost: $790

Who should attend?

Scientists, engineers, technicians, and others who desire a practical, current understanding of FIB and SIMS.