Awardee Interviews | Biography: Deep Jariwala

Deep Jariwala

Deep Jariwala, University of Pennsylvania, For pioneering contributions to the development and characterization of heterostructures for new low-power electronic and opto-electronic devices

Deep Jariwala is an Assistant Professor in Department of Electrical and Systems Engineering at the University of Pennsylvania (Penn). His research interests broadly lie at the intersection of new materials, surface science and solid-state devices for computing, sensing, opto-electronics and energy harvesting applications. Deep completed his undergraduate degree in Metallurgical Engineering from the Indian Institute of Technology, Banaras Hindu University in 2010 and his Ph.D. in Materials Science and Engineering at Northwestern University in 2015. Deep then moved to Caltech as a Resnick Prize Postdoctoral Fellow from 2015-2017 before joining Penn in 2018 to launch his independent career.

At Penn, Deep’s research has focused on study of new low-dimensional materials, surfaces and interfaces. Specifically, his research group focuses on two-dimensional (2D) materials and their interfaces with other materials. Over the past few years, his group has made noteworthy contributions in developing low-power tunneling transistors and ferroelectric memory devices based on 2D semiconductors. In addition, his group has also developed superlattices of 2D semiconductors that exhibit strong light-matter interactions. His group has also contributed to scanning probe imaging and nano-optical spectroscopy of 2D semiconductors and their interfaces with 3D materials.

Deep’s research has earned him awards from multiple professional societies including the Russell and Sigurd Varian Award as well as the Paul H. Holloway Award of the American Vacuum Society, The Richard L. Greene Dissertation Award of the American Physical Society, the Army Research Office and Office of Naval Research Young Investigator Awards, TMS Frontiers in Materials Award, Intel Rising Star Award, IEEE Photonics Society Young Investigator Award, IEEE Nanotechnology Council Early Career Award, IUPAP Early Career Scientist Prize in Semiconductors and the Alfred P. Sloan Fellowship. Recently, his work on ferroelectric diode memory was also awarded with the Bell Labs Prize.

In terms of service to the AVS and academic community, he has served on the Nanoscale Science and Technology Division (NSTD) Executive Committee since 2021, and is currently the Vice Chair of the AVS Mid-Atlantic Chapter. In addition, he has also served on the Meeting assessment sub-committee of the Materials Research Society (MRS) and has organized multiple symposia at both MRS and AVS meetings. He also currently serves as an Associate Editor for the IEEE Photonics Technology Letters as well as npj 2D materials and applications