As demand for more powerful microelectronic devices continues to rise, new atomic layer processing technologies are needed to keep pace with shrinking dimensions and increasingly complex device architectures. Thermal budget has become a limiting constraint, as 3D integration and temperature-sensitive substrates leave little room for conventional high-temperature deposition and etching. In this talk, I will present results from CU Boulder’s electron-enhanced atomic-scale processing, in which low-energy electrons replace thermal energy to drive surface reactions below 120 °C. I will cover electron-enhanced atomic layer deposition (EE-ALD), electron-enhanced chemical vapor deposition (EE-CVD), and electron-enhanced chemical vapor etching (EE-CVE), with results for TiN and composition-tunable TiCN; silicon and its oxide, nitride, and carbide; carbon deposition and etching; and ZrO2, among others.

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