Course Objectives

• Learn the fundamentals of ALD including basic surface science concepts and surface chemistry
• Understand why ALD processes are dependent precursor properties and reactivity
• Understand the theory and design of various ALD reactors
• Learn how ALD processes and thin films are characterized in-situ and ex-situ
• Understand the potential applications of ALD and future trends in ALD research

Course Description

This course will develop a basic understanding of the atomic layer deposition (ALD) technique and apply that to the detailed understanding of the ALD chemistry of oxides, nitrides, sulfides and metals. Precursor requirements and various ALD reactor configurations will be reviewed. The details involved in efficient ALD flow tube reactor design will also be covered.

Measuring ALD growth rates, monitoring ALD chemistry and analyzing thin film properties are necessary to characterize ALD thin films. In-situ and ex-situ methods for analyzing ALD grown films will be covered. This includes spectroscopic ellipsometry, quartz crystal microbalance (QCM), X-ray diffraction and reflectivity, Auger spectroscopy, mass spectrometry, infrared spectroscopy, and x-ray photoelectron spectroscopy (XPS). Examples of each technique will be presented and discussed.

ALD is finding applications in many diverse areas of technology. This class will survey the potential uses of ALD in gate dielectric formation in microelectronics, composite structures for X-ray optics, coatings for MEMS devices, and diffusion barriers for corrosion resistance in polymer electronics. Potential avenues of future ALD research will be mentioned.

Course Materials

Course Notes