Dr. Robert K. Grubbs received his B.S. degree in chemistry at Clarkson University and his M.S. degree in physical chemistry from University of California, Berkeley. He pursued his Ph.D. in physical chemistry under the direction of Dr. Steve George at the University of Colorado in Boulder in the area of atomic layer deposition (ALD). His research involved the nucleation and growth of ALD metal films. After graduating he became a Postdoctoral Researcher at Sandia National Laboratories in New Mexico studying the pressure-induced phase behavior of complex perovskite materials. During his subsequent ten year tenure at Sandia, he was responsible for the installation and management of the ALD facilities at the lab and directed ALD and thin films materials research for various energy and national security applications. He is presently a Principal Engineer at Micron Technology applying plasma enhanced chemical vapor deposition (PECVD) and ALD to advanced computer memory development. He has been involved in ALD and PECVD research for the last fifteen years and presently is a nationally recognized AVS Short Course Instructor in both ALD and PECVD.