- Understand fundamental concepts of ion penetration and damage accumulation, implant system architecture and operation of key system components.
- Understand the operating principles and capabilities of key process control metrologies for dosimetry, profile analysis, damage and wafer charging.
- Understand the interaction of machine design and operation for such process effects as chip-level dose variations, ion profile purity problems, contamination from dopant, metallic and organic materials, particle masking and kinetic damage and charging.
- Review examples of the use of ion implantation techniques and process metrologies for formation of ultra-shallow junctions, fabrication of SOI and other heterogeneous wafer materials by direct implant and layer transfer and doping challenges for 3-D structures such as Fin-FETs.
This course will contain discussions of: (1) fundamentals of ion stopping, damage formation and range profile characteristics, (2) fundamentals of ion implantation systems, including ion sources, ion mass selection, acceleration, beam scanning dosimetry and vacuum issues, (3) reviews of the process metrologies for ion dose, depth profile, damage and wafer charging, (4) process effects for chip-level dose variations, energy and charge state contamination, dopant, metallic and organic contaminants, particle masking and kinetic damage effects and wafer charging, (5) formation of SOI materials by direct implant and by implant-driven layer transfer, and (6) doping challenges for ultra-shallow junctions and 3-D structures such as fin-FETs.
Course Cost: $790
Who should attend?
This course is intended for engineers and scientists involved with transistor fabrication process development or design and operation of ion implantation techniques for doping and materials modification.
Physicist at Current Scientific