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UID:a48a9eb2-6e80-4e2d-a7b1-c46cd8fc93ee@avs.org
DTSTAMP:20260920T194002Z
DTSTART:20261020T170000Z
DTEND:20261020T180000Z
LOCATION: Virtual/Online
DESCRIPTION:As demand for more powerful microelectronic devices continues to rise, new atomic layer processing technologies are needed to keep pace with shrinking dimensions and increasingly complex device architectures. Thermal budget has become a limiting constraint, as 3D integration and temperature-sensitive substrates leave little room for conventional high-temperature deposition and etching. In this talk, I will present results from CU Boulder’s electron-enhanced atomic-scale processing, in which low-energy electrons replace thermal energy to drive surface reactions below 120 °C. I will cover electron-enhanced atomic layer deposition (EE-ALD), electron-enhanced chemical vapor deposition (EE-CVD), and electron-enhanced chemical vapor etching (EE-CVE), with results for TiN and composition-tunable TiCN; silicon and its oxide, nitride, and carbide; carbon deposition and etching; and ZrO2, among others.\n\nREGISTER NOW!\n\n Virtual/Online\n\n Heather Korff
SUMMARY: AVS e-Talk: Electron-Enhanced Atomic Scale Processing for the Low Temperature Deposition and Etching of Thin Films
PRIORITY:3
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