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UID:6f053845-7c46-4559-9771-6f1c4420c2f5@avs.org
DTSTAMP:20260429T183935Z
DTSTART:20260513T170000Z
DTEND:20260513T180000Z
LOCATION: Virtual/Online
DESCRIPTION:The performance of current quantum devices such as superconducting qubits, single photon emitters, and quantum sensors is limited in part by losses at surfaces and interfaces. Conventional fabrication using dry etch processes disorders and contaminates surfaces and sidewalls, increasing device loss. We are developing novel atomic layer etch (ALE) processes with reduced interfacial damage. In this talk, we will describe how quantum devices are made, evidence of interfacial loss, the mechanisms and chemistry of ALE, and how ALE is already being used to improve quantum device performance.\n\nREGISTER NOW!\n\n Virtual/Online\n\n Heather Korff
SUMMARY: AVS e-Talk: Atomic Layer Etch for Better Quantum Device Performance
PRIORITY:3
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