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PRODID:-//Kentico Software//NONSGML Kentico CMS//EN
VERSION:2.0
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UID:37d83d88-9437-480c-9be6-98c33f1d38b2@avs.org
DTSTAMP:20260429T183933Z
DTSTART:20220201T150000Z
DTEND:20220202T220000Z
LOCATION: Virtual/Online
DESCRIPTION:\nThe first day of this course covers plasma-assisted etching phenomena and equipment in a manner that will assist the attendee in understanding and developing plasma etching and RIE processes. The emphasis will be on the fundamental physical and chemical processes that determine the consequences of a reactive gas plasma/surface interaction. The role of energetic ions as encountered in RIE systems and the factors that influence anisotropy of etching will be described. Many kinds of plasma-assisted etching equipment will be discussed, including capacitively coupled, inductively coupled, and wave-generated plasma sources.\n\nThe second day of this course covers the applied aspects of plasma-assisted etching. Emphasis will be on mechanistic understanding as opposed to specific processing issues, recipes, and problems. The etching of Si and its compounds will be covered in detail as well as the etching of other technology-related materials such as Al, organics, III-V compounds, etc. Topics such as selectivity, loading, ARDE, damage, and issues associated with high-density plasma RIE will be covered. A section on plasma diagnostics will focus on optical emission spectroscopy with actinometry, mass spectrometry, and laser-induced fluorescence.\n\n Virtual/Online\n\n Heather Korff
SUMMARY: Plasma Etching and RIE: Fundamentals and Applications (1 or 2 days)
PRIORITY:3
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DESCRIPTION:Reminder
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