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DTSTAMP:20260429T184132Z
DTSTART:20210902T170000Z
DTEND:20210902T210000Z
LOCATION: Virtual/Online
DESCRIPTION:\nBeta-Gallium Oxide is an emerging ultra-wide band gap semiconductor with a predicted critical breakdown field much higher than the commercial wide band gap semiconductors such as Gallium Nitride and Silicon Carbide. The key attractive feature is the availability of single crystal large area bulk substrates. This webinar will begin with the motivation for pursuing research on ultra-wide band gap semiconductors for applications in power electronics and high frequency electronics. State-of-the-art progress in bulk crystal growth, epitaxy and ion implantation will be reviewed. Strategies to maximize breakdown voltage in lateral Gallium Oxide MOSFETs, vertical diodes and transistors will be discussed. The main theme of the webinar will be to highlight and discuss the interrelationship between material properties, material processing and device performance. The future outlook for Gallium Oxide in achieving its theoretical potential, as well as the key challenges & limitations, will also be discussed.\n\nREGISTER HERE\n\n Virtual/Online\n\n Heather Korff
SUMMARY: AVS Webinar: Gallium Oxide Materials and Devices for Next Generation Ultra-wide Bandgap Electronics
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