Course Objectives

• Understand CVD for integrated-circuit applications.
• Know the characteristics and processes of various reactor types, including cold-wall and hot-wall CVD reactors.
• Learn about the properties of CVD layers and how they are affected by the deposition processes.

Course Description

Following an introduction to the kinetics of CVD, including gas-phase and surface processes, the practical aspects of CVD are emphasized. The various reactors used for CVD are discussed with special emphasis on contrasting cold-wall and hot-wall reactors. A discussion of the methods for achieving uniformity in each of these reactors illustrates the differing importance of gas-phase and surface processes. Most of the remainder of the day is devoted to considering the properties of the layers important in IC applications and how they are influenced by the deposition process.

Epitaxial and polycrystalline silicon and deposited dielectrics are described. The concept of plasma-enhanced CVD is introduced, and materials deposited by PECVD are described. The day concludes with consideration of the CVD process and properties of CVD metals and refractory metal silicides. Copies of the visuals used in the course will be supplied to participants.

Course Materials

Course Notes